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Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60 mohm, 900 V, M2, TO247−4L

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Overview

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • Automotive PFC
  • Automotive DC/DC
  • Automotive DC/DC converter for EV/PHEV
  • Automotive On Board Charger
  • High Junction Temperature
  • 900V Rating
  • 100% UIL Tested
  • RoHS Compliant
  • Qualified for Automotive According to AEC−Q101

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NVH4L060N090SC1

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CAD Model

Pb

A

H

P

TO-247-4

NA

0

TUBE

450

F

M2

900

46

60

87

113

175

$9.6606

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