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Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60 mΩ, 900 V, M2, D2PAK−7L

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Overview

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • High power DCDC
  • Inverter
  • Automotive DC/DC converter for EV/PHEV
  • Automotive Inverters
  • Typical RDSon
  • High Speed Switching and Low Capacitance
  • Qualified for Automotive According to AEC−Q101
  • 100% UIL Tested
  • Devices are RoHS Compliant

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Reference Price

NVBG060N090SC1

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Active

CAD Model

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

1

245

REEL

800

Y

M2

900

44

60

88

115

175

$9.1373

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