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Silicon Carbide (SiC) MOSFETs | NTHL060N090SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-3L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC-DC Converter
  • Boost Inverter
  • UPS
  • Solar Inverter
  • Typical RDSon
  • Ultra Low Gate Charge (Qg tot)
  • Low Effective Output Capacitance (Coss)
  • 100% UIL Tested
  • RoHS Compliant

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NTHL060N090SC1

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Pb

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TO-247-3LD

340CX

NA

0

TUBE

450

Y

M2

900

46

60

87

113

175

$6.2082

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