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Silicon Carbide (SiC) MOSFETs | NTH4L080N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • PFC
  • Boost Inverter
  • PV Charging
  • Industrial Power Supply
  • Solar Inverter
  • 1200V
  • High Junction Temperature
  • High UIS, Surge Current, and Avalanche

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NTH4L080N120SC1

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Pb

A

H

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TO-247-4

340CJ

NA

0

TUBE

450

Y

M1

1200

29

80

56

80

175

$5.4998

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