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Silicon Carbide (SiC) MOSFETs | NTH4L060N090SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC-DC Converter
  • Boost Inverter
  • UPS
  • Solar
  • Power Devices
  • High Junction Temperature
  • 900V Rating
  • 100% UIL Tested
  • RoHS Compliant

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NTH4L060N090SC1

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Pb

A

H

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TO-247-4

340CJ

NA

0

TUBE

450

F

M2

900

67

60

61.8

107

175

$6.5296

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