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Silicon Carbide (SiC) MOSFETs | NTBG060N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • Telecommunication
  • Cloud system
  • Industrial
  • Telecom power
  • Server power
  • UPS / ESS
  • Solar
  • High Junction Temperature (Tj = 175°C)
  • Kelvin Source Configuration
  • Ultra Low Gate Charge (QG(tot) = 74 nC)
  • Low Output Capacitance (Coss = 133 pF)
  • Zero reverse recovery current of body diode
  • Typ. RDS(on) = 44 mΩ
  • 650V rated
  • 100% UIL Tested
  • Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
  • Moisture Sensitivity Level 1 guarantee
  • Internal Gate Resistance: 3.9 Ω

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NTBG060N065SC1

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CAD Model

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

418BJ

1

260

REEL

800

F

M2

650

46

44

74

133

175

$5.8733

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