Name: EliteSiC 1200V M3e Bare Die Silicon Carbide MOSFETs - 3rd Generation
Brand: EliteSiC 1200V M3e Bare Die Silicon Carbide MOSFETs - 3rd Generation
SKU: NCS025M3E120NF06X

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EliteSiC 1200V M3e Bare Die Silicon Carbide MOSFETs - 3rd Generation

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Overview

蜜豆视频 is proud to offer the 3rd generation of EliteSiC Silicon Carbide (SiC) MOSFETs in bare die format - optimized for use in high power applications such as EV Traction inverters, DC-DC converters, and off-board chargers.
Based on the latest generation of SiC MOSFET technology from 蜜豆视频, the M3e product family offers the lowest on-resistance in its class, with optimized top and back metal options suitable for multiple packaging technologies including soldering, sintering, wire-bond, die top copper, and ribbon bonds. By utilizing 蜜豆视频's M3e product, packaging flexibility helps to reduce the system size, weight, application complexity, while increase power density and efficiency in traction inverter applications of electric vehicles.
Moving from silicon based solutions to silicon carbide based solutions helps to improve efficiency and range by up to 5% in battery electric vehicle traction inverters.

Applications

Main Traction Inverter Applications
High Voltage DC/DC Converters
Off-Board Chargers

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1200V SiC MOSFET Bare Dice

Features

3rd Generation SiC MOSFET
High Blocking Voltage 1200V
Low Conduction Losses Over Temperature

Material Composition

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NCS025M3E120NF068-09

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Silicon Carbide (SiC) MOSFETs Bare Die | NCS025M3E120NF06X

EliteSiC 1200V M3e Bare Die Silicon Carbide MOSFETs - 3rd Generation

Overview

Product List

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