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50 mA, 20 V PNP RF Bipolar Junction Transistor

Overview

50 mA, 20 V PNP RF Bipolar Junction Transistor is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75.

  • This product is general usage and suitable for many different applications.

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MSL Temp (°C)

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ON Target

Polarity

IC Continuous (A)

VCEO(sus) Min (V)

hFE Min

hFE Max

PTM Max (W)

fT Min (MHz)

NF Typ. (dB)

|S21e| 2 Typ. (dB)

Reference Price

MMBTH81

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CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

1

260

REEL

3000

N

PNP

0.05

20

60

-

0.225

600

-

-

$0.0391

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