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IGBT Modules | NXH80B120L2Q0

Power Integrated Module, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 30 A Si Diode

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Overview

The NXH80B120L2Q0SG is a power module containing a dual boost stage consisting of two 40A/1200V IGBTs, two 30A/1200V silicon diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

  • Solar Inverter Boost Stage
  • Solar Inverter
  • UPS
  • IGBT Specifications: VCE(SAT) = 2.2 V, ESW = 2830 uJ
  • 25 A / 1600 V Bypass and Anti−parallel Diodes
  • Si Rectifier Specification: VF = 2.4 V, IRRM = 53 A
  • Solderable Pins
  • Dual Boost 40 A / 1200 V IGBT + Si Rectifier Module
  • Thermistor

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NXH80B120L2Q0SNG

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Pb

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Q0

180AJ

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0

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24

N

Dual Boost - Full Silicon

1200

40

2.1

2.5

Industrial

Price N/A

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